MP6Z2 transistors rev.a 1/5 medium power transistor (32v, 2a) MP6Z2 z applications low frequency amplifier z features 1) low v ce(sat) v ce(sat) = 0.5v(typ.) (i c /i b = 2a / 0.2a) 2) contains 2sd1766-die and 2sb1188-die in a package. z structure silicon epitaxial planar transistor z dimensions (unit : mm) mpt6 (6) (5) (4) (1) (2) (3) z z packaging specifications z inner circuit package code tr 1000 taping basic ordering unit(pieces) MP6Z2 type z z absolute maximum ratings (ta=25 q c) ? 1 v v cbo 40 v v ceo 32 a i c 2.0 a i cp 2.5 w / total p d 2.0 w / element 1.4 c t j c tstg tr1 ? 40 ? 32 ? 2.0 ? 2.5 tr2 collector-base voltage collector-emitter voltage v v ebo 5 ? 5 emitter-base voltage collector current power dissipation junction temperature range of storage temperature continuous pulsed ? 1 pw=10ms 1pulse ? 2 mounted on a ceramic board ? 2 150 ? 55 to 150 parameter symbol limits unit (1) (1) emitter (2) base (3) collector (4) emitter (5) base (6) collector (2) (3) (6) (5) (4)
MP6Z2 transistors rev.a 2/5 z electrical characteristics (ta=25 q c) parameter symbol bv ceo bv cbo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 32 40 5 ? ? 120 ? ? ? ? ? ? ? ? 500 ? 100 30 ? ? ? 1.0 1.0 390 800 ? ? vi c = 1ma i c = 50 a i e = 50 a v cb = 20v v eb = 4v v ce = 3v, i c = 500ma v ce = 5v, i e =? 50ma, f = 100mhz ? ? i c = 2a, i b = 200ma v cb = 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf typ. max. unit conditions collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage transition frequency collector output capacitance ? pulsed parameter symbol bv ceo bv cbo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 32 ? 40 ? 5 ? ? 120 ? ? ? ? ? ? ? ? ? 500 ? 100 50 ? ? ? ? 1.0 ? 1.0 390 ? 800 ? ? vi c = ? 1ma i c = ? 50 a i e = ? 50 a v cb = ? 20v v eb = ? 4v v ce = ? 3v, i c = ? 500ma v ce = ? 5v, i e = 50ma, f = 100mhz ? ? i c = ? 2a, i b = ? 200ma v cb = ? 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf typ. max. unit conditions collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage transition frequency collector output capacitance ? pulsed
MP6Z2 transistors rev.a 3/5 z electrical characteristics curves collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.5 collector-emitter saturation voltage vs. collector current ( ) 500 20 200 100 50 5 10 20 50 100 200 500 1a 2a ta = 25 c 10 20 i c /i b = 50 base saturation voltage : v be(sat) (v) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current 5 1 2 0.2 0.5 0.1 10 20 50 100 200 500 1a 2a ta = 25 c i c /i b = 10 emitter current : i e (ma) transition frequency : f t (mhz) fig.8 transition frequency vs. emitter current - 2 ? 1 200 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1a 500 1000 100 50 20 ta = 25 c v ce = 5v 0.5 200 10 500 1000 100 20 50 12 51020 ta = 25 c f = 1mhz i e = 0a i c = 0a collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob 0.001 0.01 0.1 1 10 00.511.5 v ce =3v ta=100 =? aaa 25 =? aaa -40 =? base to emitter voltage b v be (v) collector current b ic(a ) fig.1 grounded emitter propagation characteristics dc current gain : h fe collector current : i c (ma) fig.3 dc current gain vs. collector current ( ) 5 500 10 20 50 100 200 500 1a 2a 200 100 50 20 ta = 25 c v ce = 3v 1v fig.4 dc current gain vs. collector current ( > ) 10 100 1000 0.001 0.01 0.1 1 10 :- :?:? :?:? v ta=100 =? aaa 25 =? aaa -40 =? collector current b ic(a) dc current gain b h fe 0.01 0.1 1 0.001 0.01 0.1 1 10 i c /i b =10 ta=100 =? aaa 25 =? aaa -40 =? collector current b ic(a) collector saturation voltage b v ce ( sat )( v ) fig.6 collector-enitter saturation voltage vs. collector current ( > ) fig.2 ground emitter output caracteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 00.511.52 i b =0ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 2.0ma 0.2ma ta=25 =? collector to emitter voltage b v ce (v b collector current b ic(a )
MP6Z2 transistors rev.a 4/5 ! ! z c b ( ? u ? | ! fig.1 grounded emitter propagation characteristics base to emitter voltage : v be (v) collector current : i c (ma) 0 ? 0.2 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 ? 1.8 ? 2.0 ? 2.2 ? 0.4 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 v ce = ? 3v ta = 100 c 25 c ? 40 c fig.2 grounded emitter output characteristics ? 0.4 0 ? 0.8 ? 1.2 ? 1.6 ? 2 0 ? 0.1 ? 0.2 ? 0.3 ? 0.4 ? 0.5 i b = 0a ? 250 a ? 500 a ? 750 a ? 1ma ? 1.25ma ? 1.5ma ? 1.75ma ? 2ma ? 2.25ma ? 2.5ma collector current : i c (a) collector to emitter voltage : v ce (v) ta = 25 c fig.3 dc current gain vs. collector curren ( ) dc current gain : h fe ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 10 0 0 ? 2000 ? 200 50 20 100 200 500 ta = 25 c collector current : i c (ma) v ce = ? 6v ? 3v ? 1v fig.4 dc current gain vs. collector current ( ) 50 20 100 200 500 dc current gain : h fe v ce = ? 3v collector current : i c (ma) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ta = 100 c 25 c ? 25 c fig.5 collector-emitter saturation voltage vs. collector vurrent ( ) collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 50 ? 100 ? 200 ? 500 ta = 25 c i c /i b = 50 20 10 fig.6 collector-emitter saturation voltage vs. collector current ( ) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 20 ? 50 ? 100 ? 200 ? 500 l c /l b = 10 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) ta = 100 c 25 c ? 40 c fig.10 normalized thermal resistance (element) fig.11 safe operating area :?:?:?:? :?:?:? :? :?:? :?:?:?:?:? :?:?:? :?:? :?:?:?:? pulse width : pw(s) normalized transient thermal resistance : r(t) ta=25 0.01 0.1 1 10 0.1 1 10 100 collector to emitter voltage : v ce (v) collector current : i c (a) 1ms 10ms 100m dc ta=25 =? single pulse
MP6Z2 transistors rev.a 5/5 fig.7 base-emitter saturation voltage vs. collector current colletor current : i c (ma) base saturation voltage : v be(sat) (v) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 0.1 ? 0.05 ? 0.2 ? 0.5 ? 1 i c /i b = 10 ta = 25 c fig.8 gain bandwidth product vs. emitter current ta = 25 c v ce = ? 5v emitter current : i e (ma) transition frequency : f t (mhz) 5 10 20 50 100 500 1000 2000 200 50 100 200 500 fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) ta = 25 c f = 1mhz i e = 0a i c = 0a ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 30 10 20 50 200 300 100 cib cob fig.10 normalized thermal resistance (element) fig.11 safe operating area :?:?:?:? :?:?:? :? :?:? :?:?:?:?:? :?:?:? :?:? :?:?:?:? pulse width : pw(s) normalized transient thermal resistance : r(t) ta=25 0.01 0.1 1 10 0.1 1 10 100 collector to emitter voltage : v ce (v) collector current : i c (a) 1ms 10ms 100m dc ta=25 =? single pulse -10 -1 -0.1 -0.01 -0.1 -1 -10 -100
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